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IMAGE SENSOR
CMOS linear image sensor
S8377/S8378 series
Built-in timing generator and signal processing circuit; single 5 V supply operation
S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate from single 5 V supply with only start and clock pulse inputs, making them easy to use. The signal processing circuit has a charge amplifier with excellent input/output characteristics and allows signal readout at 500 kHz. The photodiodes of S8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S8378 series also have a height of 0.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 3 different pixel quantities for each series: 128 (S8377-128Q), 256 (S8377-256Q, S8378-256Q), 512 (S8377-512Q, S8378-512Q) and 1024 (S8378-1024Q). Quartz glass is the standard window material.
Features
Pixel pitch: 50 m (S8377 series) 25 m (S8378 series) Pixel height: 0.5 mm l On-chip charge amplifier with excellent input/output characteristics l Built-in timing generator allows operation with only start and clock pulse inputs l Maximum operating clock frequency: 500 kHz l Spectral response range: 200 to 1000 nm l Single 5 V power supply operation l 8-pin small package, S8377 and S8378 series are pin compatible.
Applications
l Wide active area
l Image input devices l Optical sensing devices
s Absolute maximum ratings
Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Operating temperature *1 Storage temperature *1: No condensation Symbol Vdd Vg V (CLK) V (ST) Topr Tstg Value -0.3 to +10 -0.3 to +10 -0.3 to +10 -0.3 to +10 -20 to +60 -20 to +80 Unit V V V V C C
s Shape specifications
Parameter Number of pixels Pixel pitch Pixel height Package length Number of pins Window material S8377128Q 128 S8377256Q 256 50 22.2 8 Quartz S8377512Q 512 0.5 15.8 35.0 15.8 22.2 8 Quartz 35.0 S8378256Q 256 S8378512Q 512 25 S83781024Q 1024 Unit m mm mm -
1
CMOS linear image sensor
S8377/S8378 series
Max. 5.25 0.4 Vdd+0.25 Vdd+0.25 0.4 Vdd+0.25 0.4 Unit V V V V V V V
s Recom m ended term inal voltage
Param eter Supply voltage Gain selection term inal voltage Clock pulse voltage Start pulse voltage Sym bol Vdd High gain Low gain High Low High Low Vg V (CLK) V (ST) Min. 4.75 0 Vdd-0.25 Vdd-0.25 0 Vdd-0.25 0 Typ. 5 Vdd Vdd Vdd -
s Electrical characteristics
Param eter Sym bol Min. Typ. Max. Unit Clock pulse frequency * 2 f (CLK) 0.1 500 kHz Output im pedance * 3 Zo 1 k Power consum ption P 25 mW *2: Ta=25 C, Vdd=5 V, V (CLK)=V (ST)=5 V, Vg=5 V (Low gain) *3: An increased current consum ption at the video term inal rises the sensor chip tem perature causing an increased dark current. Connect a buffer am plifier for im pedance conversion to the video term inal so that the current flowing to the video term inal is m inim ized. Use a JFET or CMOS input, high-im pedance input op am p as the buffer am plifier.
s Electrical and optical characteristics [Ta=25 C, Vdd=5 V, V (CLK)=V (ST)=5 V]
Param eter Spectral response range Peak sensitivity wavelength High gain Photo sensitivity Low gain Dark current Saturation charge F e e d b a ck ca p acitanc e * 4 High gain of charg e a m plifier Low gain High gain 5 Dark output voltage * Low gain High gain Saturation output voltage Low gain High gain 6 Saturation exposure * Low gain Low gain Readout noise High gain Nr Sym bol p S ID Qsat Cf Vd Vsat Esat Min. 2.8 2.1 -3 S8377 series Typ. 200 to 1000 500 22 4.4 0.08 12.5 1 5 8.0 1.6 3.2 2.5 145 570 0.1 (-128 Q) 0.15 (-256 Q) 0.2 (-512 Q) 0.4 (-128 Q) 0.5 (-256 Q) 0.8 (-512 Q) Max. 0.24 24 4.8 +3 Min. 2.8 2.1 -3 S8378 series Typ. 200 to 1000 500 22 4.4 0.04 6.3 0.5 2.5 8.0 1.6 3.2 2.5 145 570 0.2 (-256 Q) 0.3 (-512 Q) 0.4 (-1024 Q) 0.9 (-256 Q) 1.3 (-512 Q) 2.1 (-1024 Q) Max. 0.12 24 4.8 +3 Unit nm nm V/lx * s pA pC PF mV V m lx * s
m V rms
Photo response non-uniform ity * 7 PRNU % *4: Vg=5 V (Low gain), Vg=0 V (High gain) *5: Storage tim e Ts=100 ms *6: Measured with a tungsten lam p of 2856 K. *7: Photo response non-uniform ity is defined under the condition that the device is uniform ly illum inated by light which is 50 % of the saturation exposure level as follows: PRNU= X/X x 100 (% ) X: the average output of all pixels, X: difference between X and maxim um or m inimum output and X
s Spectral response (typical example)
100 (Typ. Ta=25 C)
RELATIVE SENSITIVITY (%)
80
60
40
20
0 200
400
600
800
1000
WAVELENGTH (nm)
KMPDB0213EB
2
CMOS linear image sensor
s Timing chart
STORAGE TIME
S8377/S8378 series
ST CLK
Video EOS 1 2 n-1 n
The storage time is determined by the start pulse intervals. However, since the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. tpw (ST) tf (ST) ST t (CLK-ST) tpw (CLK) tr (CLK) tf (CLK) tr (ST)
CLK
Vout
Video tvd1
tvd2
KMPDC0149EA
Parameter Start pulse width Start pulse rise and fall time Clock pulse width Clock pulse rise and fall time Clock pulse-start pulse timing Video delay time 1 Video delay time 2
Symbol tpw (ST) tr (ST), tf (ST) tpw (CLK) tr (CLK), tf (CLK) t (CLK-ST) tvd1 tvd2
Min. 600 ns 0 1000 ns 0 400 ns 200 50
Typ. 20 20 300 150
Max. 10 ms 30 5 ms 30 5 ms 400 250
Unit ns ns ns ns
3
CMOS linear image sensor
s Block diagram
S8377/S8378 series
7 DIGITAL SHIFT REGISTER ADDRESS SWITCH CHARGE AMP CLAMP CIRCUIT 3 6
EOS Vg Video
PHOTODIODES 1 2 3 4 5 N-1 N
TIMING GENERATOR
4 Vdd
8 Vss
1 CLK
2 ST
KMPDC0150EA
s Pin connections
Pin No. 1 2 3 4 5 6 7 8 Symbol CLK ST Vg Vdd NC Video EOS Vss Name of pin Clock pulse Start pulse Gain selection voltage Supply voltage Video End of scan Ground Function Pulse input to operate the shift register. The readout time (data rate) equals the clock pulse frequency. Starts the shift register operation. The start pulse intervals determine the signal storage time. Input of 5 V selects "Low gain" and 0 V selects "High gain" 5 V Typ. Open Signal output. Positive-going output from 1 V Negative-going signal output obtained at a timing following the last pixel scan.
CLK 1 ST 2 Vg 3 Vdd 4
8 Vss 7 EOS 6 Video 5 NC
KMPDC0151EA
4
CMOS linear image sensor
s Dimensional outlines (unit: mm) S8377-128Q, S8378-256Q
3.935 0.2
ACTIVE AREA 6.4 x 0.5 3.2 0.3
ACTIVE AREA 12.8 x 0.5
S8377/S8378 series
S8377-256Q, S8378-512Q
6.4 0.3
3.935 0.2 3.935 0.2 7.87
3.935 0.2
7.87
15.8
CHIP
22.2
CHIP
1.3 0.2 *
5.0 0.5
5.0 0.5
3.0
3.0
0.51 2.54 7.62 7.62
0.25
0.51 2.54 7.62 7.62
0.25
* Optical distance from the outer surface of the quartz window to the chip surface
* Optical distance from the outer surface of the quartz window to the chip surface
KMPDA0150EC
1.3 0.2 *
KMPDA0151EC
S8377-512Q, S8378-1024Q
ACTIVE AREA 25.6 x 0.5
3.935 0.2 3.935 0.2 7.87
12.8 0.3
35.0
CHIP
1.3 0.2 *
5.0 0.5
3.0
0.51 2.54 7.62 7.62
0.25
* Optical distance from the outer surface of the quartz window to the chip surface
KMPDA0152EC
5
CMOS linear image sensor
S8377/S8378 series
s Handling precautions (1) Electrostatic countermeasures Although the CMOS linear image sensor is protected against static electricity, proper electrostatic countermeasures must be provided to prevent device destruction by static electricity. For example, such measures include wearing non-static gloves and clothes, and grounding the work area and tools. (2) Incident window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) UV exposure The CMOS linear image sensor is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1066E05
6
Feb. 2007 DN

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